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IXTH30N50L IXTQ30N50L
IXTT30N50L
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(T J = 25 ° C, unless otherwise specified)
Min.
Typ.
Max.
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
9
12
15
S
C iss
10.2
nF
1
2
3
? P
C oss
C rss
R Gi
V GS = 0V, V DS = 25V, f = 1MHz
Integrated gate input resistor
540
127
3.5
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 0 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247, TO-3P)
35
117
94
40
240
58
135
0.25
ns
ns
ns
ns
nC
nC
nC
0.31 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
Safe Operating Area Specification
E 15.75 16.26
e 5.20 5.72
.610 .640
0.205 0.225
Symbol
SOA
Test Conditions
V DS = 400V, I D = 0.5A, T C = 75°C, t p = 2s
Min.
200
Typ.
Max.
W
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.780 .800
.177
.140 .144
0.232 0.252
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
Symbol
I S
I SM
V SD
t rr
Test Conditions
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s, V R = 100V
Min. Typ. Max.
30
120
1.5
500
A
A
V
ns
TO-3P (IXTQ) Outline
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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